Direct growth of monolayer MoS<sub>2</sub> on nanostructured silicon waveguides-Reference-Cited by-同舟云学术

Direct growth of monolayer MoS₂ on nanostructured silicon waveguides

Published:2022-08-22 Issue:19 Volume:11 Page:4397-4408
ISSN:2192-8614
Container-title:Nanophotonics
language:en
Short-container-title:

Author:

Kuppadakkath Athira¹^ORCID,Najafidehaghani Emad²,Gan Ziyang²,Tuniz Alessandro³,Ngo Gia Quyet¹,Knopf Heiko¹³,Löchner Franz J. F.¹,Abtahi Fatemeh¹,Bucher Tobias¹⁴,Shradha Sai¹,Käsebier Thomas¹,Palomba Stefano³,Felde Nadja⁵,Paul Pallabi¹⁵,Ullsperger Tobias¹,Schröder Sven⁵,Szeghalmi Adriana¹⁵^ORCID,Pertsch Thomas¹⁵⁵,Staude Isabelle¹⁵⁴,Zeitner Uwe⁵,George Antony²,Turchanin Andrey²,Eilenberger Falk¹⁵⁵

Affiliation:

1. Friedrich Schiller University, Institute of Applied Physics, Abbe Center of Photonics , Albert-Einstein-Str. 15, 07745 Jena , Germany

2. Friedrich Schiller University, Institute of Physical Chemistry , Jena , Germany

3. Fraunhofer-Institute for Applied Optics and Precision Engineering IOF , Albert-Einstein-Str. 7, 07745 Jena , Germany

4. Friedrich Schiller University Jena, Institute of Solid State Physics , Max-Wien-Platz 1, 07743 Jena , Germany

5. Max Planck School of Photonics , Hans-Knöll-Straße 1, 07745 Jena , Germany

Abstract

Abstract We report for the first time the direct growth of molybdenum disulfide (MoS2) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals material grow conformally across the curves, edges, and the silicon–SiO2 interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO2) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

Link

https://www.degruyter.com/document/doi/10.1515/nanoph-2022-0235/pdf

Reference78 articles.

1. D. J. Lockwood and L. Pavesi, “Silicon fundamentals for photonics applications,” in Silicon Photonics, vol. 94, Berlin, Heidelberg, Springer, 2004, pp. 1–50.

2. R. Soref, “The past, present, and future of silicon photonics,” IEEE J. Sel. Top. Quantum Electron., vol. 12, no. 6, pp. 1678–1687, 2006. https://doi.org/10.1109/jstqe.2006.883151.

3. L. Tsybeskov, D. J. Lockwood, and M. Ichikawa, “Silicon photonics: CMOS going optical [scanning the issue],” Proc. IEEE, vol. 97, no. 7, pp. 1161–1165, 2009. https://doi.org/10.1109/jproc.2009.2021052.

4. P. Dong, Y. Chen, G. Duan, and D. T. Neilson, “Silicon photonic devices and integrated circuits,” Nanophotonics, vol. 3, nos. 4–5, pp. 215–228, 2014. https://doi.org/10.1515/nanoph-2013-0023.

5. W. Zhu, T. Low, Y. Lee, et al.., “Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition,” Nat. Commun., vol. 5, no. 1, p. 3087, 2014. https://doi.org/10.1038/ncomms4087.

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A tunable transition metal dichalcogenide entangled photon-pair source;Nature Communications;2024-09-01

2. Impact of MoS₂ Monolayers on the Thermoelastic Response of Silicon Heterostructures;ACS Applied Nano Materials;2024-07-01

3. Surface Plasmon Waveguide Based on Nested Dielectric Parallel Nanowire Pairs Coated with Graphene;Photonics;2024-05-09

4. Hybrid Integrated Silicon Photonics Based on Nanomaterials;Photonics;2024-04-30

5. Quasi-BIC resonance in TiO2 metasurface for emission enhancement of two-dimensional material;Photonic and Phononic Properties of Engineered Nanostructures XIV;2024-03-13