Lanthanide Nd ion-doped two-dimensional In2Se3 nanosheets with near-infrared luminescence property

Author:

Liu Yuan1,Bai Gongxun1,Jiang Li2,Hua Youjie1,Chen Liang2,Xu Shiqing1

Affiliation:

1. Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, People’s Republic of China

2. Institute of Optoelectronic Technology, China Jiliang University, Hangzhou 310018, People’s Republic of China

Abstract

AbstractUltrathin two-dimensional (2D) materials have drawn great attention in recent years due to their promising applications in biomedicine and atomically optoelectronic devices. In this work, we have fabricated a 2D In2Se3 nanosheet doped with Nd3+ ions via the two-step method of solid phase synthesis and liquid exfoliation. Owing to the special inner 4f-4f energy level transitions, lanthanide ions can emit photons with almost the same energy in different environments. Here, a stable near-infrared luminescence from Nd3+-doped 2D In2Se3 nanosheets has been realized, which includes emission bands around 910, 1057, and 1324 nm. The doping of Nd3+ ions extends the emission region of In2Se3 nanosheets. Moreover, the photoluminescence mechanism of Nd3+ ions was investigated through a series of optical measurements. This work not only provides a reliable method to fabricate lanthanide ion-doped 2D materials but also possesses a great significance for luminescence study of lanthanide ions in the 2D matrix.

Funder

National Natural Science Foundation of China

National Key Research and Development Project

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

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