A large-scale single-mode array laser based on a topological edge mode

Author:

Ishida Natsuko1ORCID,Ota Yasutomo23,Lin Wenbo14,Byrnes Tim56789,Arakawa Yasuhiko3,Iwamoto Satoshi134

Affiliation:

1. Research Center for Advanced Science and Technology , The University of Tokyo , 4-6-1 Komaba, Meguro , Tokyo , 153-8505 , Japan

2. Department of Applied Physics and Physico-Informatics , Keio University , 3-14-1 Hiyoshi, Kohoku-ku , Yokohama , Kanagawa 223-8522 , Japan

3. Institute for Nano Quantum Information Electronics , The University of Tokyo , 4-6-1 Komaba, Meguro , Tokyo , 153-8505 , Japan

4. Institute of Industrial Science , The University of Tokyo , 4-6-1 Komaba, Meguro , Tokyo , 153-8505 , Japan

5. New York University Shanghai , 1555 Century Ave, Pudong , Shanghai , 200122 , China

6. State Key Laboratory of Precision Spectroscopy, School of Physical and Material Sciences , East China Normal University , Shanghai , 200062 , China

7. NYU-ECNU Institute of Physics at NYU Shanghai , 3663 Zhongshan Road North , Shanghai , 200062 , China

8. National Institute of Informatics , 2-1-2 Hitotsubashi, Chiyoda-ku , Tokyo , 101-8430 , Japan

9. Department of Physics , New York University , New York , NY 10003 , USA

Abstract

Abstract Topological lasers have been intensively investigated as a strong candidate for robust single-mode lasers. A typical topological laser employs a single-mode topological edge state, which appears deterministically in a designed topological bandgap and exhibits robustness to disorder. These properties seem to be highly attractive in pursuit of high-power lasers capable of single mode operation. In this paper, we theoretically analyze a large-scale single-mode laser based on a topological edge state. We consider a sizable array laser consisting of a few hundreds of site resonators, which support a single topological edge mode broadly distributed among the resonators. We build a basic model describing the laser using the tight binding approximation and evaluate the stability of single mode lasing based on the threshold gain difference Δα between the first-lasing edge mode and the second-lasing competing bulk mode. Our calculations demonstrate that stronger couplings between the cavities and lower losses are advantageous for achieving stable operation of the device. When assuming an average coupling of 100 cm−1 between site resonators and other realistic parameters, the threshold gain difference Δα can reach about 2 cm−1, which would be sufficient for stable single mode lasing using a conventional semiconductor laser architecture. We also consider the effects of possible disorders and long-range interactions to assess the robustness of the laser under non-ideal situations. These results lay the groundwork for developing single-mode high-power topological lasers.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology

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