The Criterion for Choosing an Insulator for Sili-con MOS Structures

Author:

Korolevych Liubomyr MykolaiovychORCID,Borysov Oleksandr VasyliovychORCID

Publisher

Kyiv Politechnic Institute

Subject

General Medicine

Reference10 articles.

1. K. A. Valiev and A. A. Orlikovskii, “Ot mikro- i nanoelektroniki k tverdotelnym kvantovym kompiuteram [From micro- and nanoelectronics to solid-state quantum computers],” in Bazovie lektsii po elektronike [Basic lectures on electronics], V. M. Proleiko, Ed. Moscow: Tehnosphera, 2009, pp. 72–95.

2. S. Kar, Ed., High Permittivity Gate Dielectric Materials, vol. 43. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013, ISBN: 978-3-642-36534-8.

3. O. Engstrom, The MOS System. Cambridge: Cambridge University Press, 2014, ISBN: 9780511794490.

4. Thermodynamic stability of binary oxides in contact with silicon;Hubbard;J. Mater. Res

5. G. Y. Krasnikov and N. A. Zaitsev, Sistema kremnii-dioksid kremniya submikronnyh SBIS [The silicon-silicon dioxide system of submicron VLSI]. Moscow: Tehnosphera, 2003, ISBN: 5-94836-008-3.

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