2-D optimisation current–voltage characteristics in AlGaN/GaN HEMTs with influence of passivation layer-Reference-Cited by-同舟云学术

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2-D optimisation current–voltage characteristics in AlGaN/GaN HEMTs with influence of passivation layer

Published:2019-04-29 Issue: Volume: Page:1-4
ISSN:0143-0750
Container-title:International Journal of Ambient Energy
language:en
Short-container-title:International Journal of Ambient Energy

Author:

Douara Abdelmalek¹,Rabehi Abdelaziz²³,Djellouli Bouaza⁴,Ziane Abderrezzaq⁵,Abid Hamza¹

Affiliation:

1. Applied Materials Laboratory, Research Center, University Djillali Liabes of Sidi Bel Abbes, Sidi Bel Abbès, Algeria

2. Département d'électronique, Institue des sciences et des technologies, Centre universitaire de Tissemsilt, Algeria

3. Laboratoire de Microélectronique Appliquée, Université Djillali Liabés, Sidi Bel Abbès, Algeria

4. Laboratory of Modeling and calculation Methods LMCM, University of Saida, Saida, Algeria

5. Unité de Recherche en Energies Renouvelables en Milieu Saharien, URERMS, Centre de Développement des Energies Renouvelables, CDER, Adrar, Algeria

Publisher

Informa UK Limited

Subject

Building and Construction,Renewable Energy, Sustainability and the Environment

Link

https://www.tandfonline.com/doi/pdf/10.1080/01430750.2019.1608856

Reference18 articles.

1. Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

2. AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

3. Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved electrical characteristics of AlxGa1−xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters;Revista Mexicana de Física;2023-07-04

2. Impact of AlN interlayer on the electronic and I-V characteristics of In0.17Al0.83N/GaN HEMTs devices;Revista Mexicana de Física;2023-05-01

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