ON THE EFFECTS OF PHYSICAL ABRASION ON NUCLEATION AND GROWTH OF DIAMOND ON SILICON USING HOT FILAMENT CHEMICAL VAPOR DEPOSITION-Reference-Cited by-同舟云学术

ON THE EFFECTS OF PHYSICAL ABRASION ON NUCLEATION AND GROWTH OF DIAMOND ON SILICON USING HOT FILAMENT CHEMICAL VAPOR DEPOSITION

Published:1991-01 Issue:3 Volume:6 Page:501-520
ISSN:1042-6914
Container-title:Materials and Manufacturing Processes
language:en
Short-container-title:Materials and Manufacturing Processes

Author:

Rebello J.H.D.,Straub D.L.,Subramaniam V.V.,Tan E.K.,Dregia S.A.,Preppernau B.L.,Miller T.A.

Publisher

Informa UK Limited

Subject

Industrial and Manufacturing Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1080/10426919108934780

Reference15 articles.

1. Vapor Deposition of Diamond Particles from Methane

2. Diamond synthesis from vapor phase and its growth process

3. Measurement of stable species present during filament‐assisted diamond growth

4. Characterization of filament‐assisted chemical vapor deposition diamond films using Raman spectroscopy

5. Mitsuda , Y. , T. Yoshida , and K. Akashi , The Growth of Diamond in MW Plasma under Low Pressure , ISPC-8, paper number S7-05 , Tokyo , ( 1987 ) .

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