Exploring the Asymmetric Characteristics of a Double Gate MOSFET with Linearly Graded Binary Metal Alloy Gate Electrode for Enhanced Performance
Author:
Affiliation:
1. Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata, India
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,Computer Science Applications,Theoretical Computer Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/03772063.2016.1176542
Reference27 articles.
1. E. Weste, Principles of CMOS VLSI Design: A System Perspective. Upper Saddle River, NJ: Pearson Education, 2003, ch. 2.
2. Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs
3. Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
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