Evolution of film curvature profile during light-emitting diode epitaxial growth-Reference-Cited by-同舟云学术

Evolution of film curvature profile during light-emitting diode epitaxial growth

Published:2016-01-21 Issue:4 Volume:44 Page:343-352
ISSN:1073-9149
Container-title:Instrumentation Science & Technology
language:en
Short-container-title:Instrumentation Science & Technology

Author:

Yan Dong,Lee Shing Man,Liu Jianpeng

Funder

the National Science and Technology Major Project of the Ministry of Science and Technology of China

Publisher

Informa UK Limited

Subject

General Environmental Science,Instrumentation,General Chemical Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/10739149.2016.1141783

Reference20 articles.

1. Norman, B.; Stephen, B.; Dan, C.; Lisa, P.; Morgan, P.; Kelsey, S.; Mary, Y. Manufacturing Roadmap Solid-State Lighting Research and Development, August 2014; http://apps1.eere.energy.gov/buildings/publications/pdfs/ssl/ssl_mfg_roadmap_aug2014.pdf

2. Growth Condition Dependence of the Photoluminescence Properties of InxGa1-xN/InyGa1-yN Multiple Quantum Wells Grown by MOCVD

3. Effects of barrier growth temperature on the properties of InGaN/GaN multi-quantum wells

4. In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature

5. Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate

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