Improvement in microstructure of SBT thin films-Reference-Cited by-同舟云学术

Improvement in microstructure of SBT thin films

Published:2001-01 Issue:1-4 Volume:39 Page:199-214
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Karasawa Junichi¹,Hamada Yasuaki²,Ohashi Koji²,Natori Eiji²,Oguchi Koichi²,Shimoda Tatsuya²,Joshi Vikram³,McMillan Larry D.³,Paz De Araujo Carlos A.³

Affiliation:

1. a Epson Research and Development, Inc. , 150 River Oaks Parkway, Suite 225, San Jose, CA 95134, USA

2. b Seiko Epson Corporation , 281 Fujimi, Fujimi-machi, Nagano-ken, 399-0293, JAPAN

3. c Symetrix Corporation , 5055 Mark Dabling Blvd., Colorado Springs, CO, 80918, USA

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580108011943

Reference3 articles.

1. Fatigue-free ferroelectric capacitors with platinum electrodes

2. Effects of Crystallization Annealing Sequence for SrBi2Ta2O9(SBT) Film on Pt/SBT Interface Morphology and Electrical Properties of Ferroelectric Capacitor

3. Influence of dry etching using argon on structural and electrical properties of crystalline and non-crystalline SrBi2Ta2O9 thin films

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