Influence of dry etching using argon on structural and electrical properties of crystalline and non-crystalline SrBi2Ta2O9 thin films-Reference-Cited by-同舟云学术

Influence of dry etching using argon on structural and electrical properties of crystalline and non-crystalline SrBi2Ta2O9 thin films

Published:1999-11 Issue:1-4 Volume:27 Page:213-225
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Hartner Walter¹,Schindler Günther¹,Weinrich Volker¹,Ahlstedt Mattias¹,Schroeder Herbert²,Waser Rainer²,Dehm Christine¹,Mazuré Carlos¹

Affiliation:

1. a Siemens AG, Semiconductor Group, Dept. HL MP E TF , D-81730, Munich, Germany

2. b Institut für Festkörperforschung, Forschungszentrum Jülich GmbH , D-52425, Jülich, Germany

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589908228470

Reference6 articles.

1. Reactive Ion Etching of Sputtered PbZr1-xTixO3Thin Films

2. Reactive ion etching of PbZr1−x TixO3 and RuO2 films by environmentally safe gases

3. Development of a new annealing process to allow new top electrode materials for SrBi2Ta2O9 capacitors

4. The Evaluation of SrBi2Ta2O9 Films for Ferroelectric Memories

5. Band alignments of the platinum/SrBi2Ta2O9 interface

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1. Micropatterning of SrBi2Ta2O9Ferroelectric Thin Films Using a Selective Deposition Technique Combined with Patterned Self-Assembled Monolayers and Liquid-Source Misted Chemical Deposition;Japanese Journal of Applied Physics;2005-04-08

2. Dynamic leakage current compensation in ferroelectric thin-film capacitor structures;Applied Physics Letters;2005-04-04

3. Influence of Dry-Etch Patterning of Top Electrode and SrBi[sub 2]Ta[sub 2]O[sub 9] on the Properties of Ferroelectric Capacitors;Journal of The Electrochemical Society;2005

4. SrBi2Ta2O9 ferroelectric thin film capacitors: degradation in a hydrogen ambient;Applied Physics A;2003-08

5. Improvement in microstructure of SBT thin films;Integrated Ferroelectrics;2001-01