Formation of ferroelectric nano-domains using scanning force microscopy for the future application of memory devices-Reference-Cited by-同舟云学术

Formation of ferroelectric nano-domains using scanning force microscopy for the future application of memory devices

Published:2000-11 Issue:1-4 Volume:31 Page:163-171
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Shin Hyunjung¹,Woo Jungwon²,Hong Seungbum¹,Jeon Jong Up¹,Pak Y. Eugene¹,No Kwangsoo²

Affiliation:

1. a Nano System Lab. , Samsung Advanced Institute of Technology and CRI , P.O. Box 111, Suwon, 440-600, Korea

2. b Department of Materials Science and Engineering , Korea Advanced Institute of Science and Technology , Taejon, 305-701, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580008215650

Reference14 articles.

1. Nanoscale Visualization and Control of Ferroelectric Domains by Atomic Force Microscopy

2. Nanoscale Scanning Force Imaging of Polarization Phenomena in Ferroelectric Thin Films

3. Characterization of ferroelectric lead zirconate titanate films by scanning force microscopy

4. High resolution study of domain nucleation and growth during polarization switching in Pb(Zr,Ti)O3 ferroelectric thin film capacitors

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