FREQUENCY-DEPENDENT POLARIZATION IN BiFeO3 THIN FILMS-Reference-Cited by-同舟云学术

FREQUENCY-DEPENDENT POLARIZATION IN BiFeO3 THIN FILMS

Published:2008-06-13 Issue:1 Volume:98 Page:83-89
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Singh S. K.¹,Maruyama K.²,Ishiwara H.¹

Affiliation:

1. a Interdisciplinary Graduate School of Science and Engineering , Tokyo Institute of Technology , 4259 Nagatsuda, Midori-ku, Yokohama , 226-8503 , Japan

2. b Fujitsu Laboratories Ltd. , 10-1 Morinosato-Wakamiya, Atsugi , 243-0197 , Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580802092381

Reference9 articles.

1. Epitaxial BiFeO 3 Multiferroic Thin Film Heterostructures

2. Reduced Leakage Current in BiFeO3Thin Films on Si Substrates Formed by a Chemical Solution Method

3. Dramatically enhanced polarization in (001), (101), and (111) BiFeO3 thin films due to epitiaxial-induced transitions

4. Crystal Structure and Electrical Properties of Epitaxial BiFeO3Thin Films Grown by Metal Organic Chemical Vapor Deposition

5. Low-temperature growth and interface characterization of BiFeO3 thin films with reduced leakage current

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