ENHANCEMENT OF MEMORY RETENTION TIME OF MFIS STRUCTURE WITH SBT FERROELECTRIC AND SiO2 BUFFER LAYERS TREATED BY NITROGEN RADICAL IRRADIATION-Reference-Cited by-同舟云学术

ENHANCEMENT OF MEMORY RETENTION TIME OF MFIS STRUCTURE WITH SBT FERROELECTRIC AND SiO2 BUFFER LAYERS TREATED BY NITROGEN RADICAL IRRADIATION

Published:2008-06-10 Issue:1 Volume:96 Page:27-39
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Van Hai Le¹,Kanashima Takeshi¹,Okuyama Masanori¹

Affiliation:

1. a Department of Systems Innovation, Graduate School of Engineering Science , Osaka University, Machikaneyamacho 1-3 , Toyonaka , Osaka , 560-8531 , Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580802074108

Reference12 articles.

1. Ferroelectric memories

2. 2004. Hiroshi Ishiwara, Topics in Applied Physics, Vol. 93, 233–254. Berlin/Heidelberg: Springer.

3. Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory

4. Ferroelectric Field Effect in Epitaxial Thin Film Oxide SrCuO 2 /Pb(Zr 0.52 Ti 0.48 )O 3 Heterostructures

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