Integration of Novel Capacitor Structure for High Density FeRAM With Barrier Metal TiAlN and (Bi,La)4Ti3O12-Reference-Cited by-同舟云学术

Integration of Novel Capacitor Structure for High Density FeRAM With Barrier Metal TiAlN and (Bi,La)4Ti3O12

Published:2004-01 Issue:1 Volume:66 Page:107-113
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

CHOI EUN-SEOK¹,KIM NAM-KYEONG¹,KWEON SOON-YONG¹,SUN HO-JUNG¹,YEOM SEUNG-JIN¹,KIM JIN-GU¹,ROH JAE-SUNG¹,KIM JIN-WOONG¹,PARK YOUNG-JIN¹

Affiliation:

1. a Memory R&D Div. Hynix Semiconductor Inc. San 136-1, Ami-ri Bubal-eub Ichon-si , Kyoungki-do, Korea , 467-701

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580490894861

Reference10 articles.

1. Ferroelectric Memories

2. Integration and electrical properties of diffusion barrier for high density ferroelectric memory

3. Ohmic Contact Properties of Tungsten Plug and Ferroelectric Properties of (Bi,La)4Ti3O12Thin Film in Stacked Capacitor Structure

4. Ferroelectric Properties and Current Conducition mechanisms of Pt/(Bi,La) 4 Ti 3 O 12 /Pt Capacitors

5. Cha , C. Park , D. Lee , S. Kim , S. and Kim , C. 1999. 16th VLSI Multilevel Interconnection 423

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