Raman scattering in the aurivillius-layered ferroelectric SrBi2Ta2O9– Bi3TiNbO9thin films-Reference-Cited by-同舟云学术

Raman scattering in the aurivillius-layered ferroelectric SrBi2Ta2O9– Bi3TiNbO9thin films

Published:2000-03 Issue:1-2 Volume:29 Page:33-41
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Ching-Prado E.¹,Pérez W.²,Dobal P. S.²,Katiyar R. S.²,Tirumala S.³,Desu S. B.³

Affiliation:

1. a Faculty of Science and Technology , Technological University of Panamá

2. b Department of Physics , University of Puerto Rico , P.O. Box 23343, San Juan, P.R., 00931

3. c Department of Materials Science and Engineering , Virginia Polytechnic Institute and State University , Blacksburg, Virginia, 24061-0237

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580008216672

Reference16 articles.

1. Ferroelectric Memories

2. Paz de Araujo , C. A. Cuchiaro , J. D. McMillan , L. D. Scott , M. C. and Scott , J. F. 1995.NatureVol. 374, 627London

3. Structural and Ferroelectric Properties of SrBi2Ta2O9 Thin Films

4. Preparation and ferroelectric properties of SrBi2Ta2O9 thin films

5. Solid Solution in the SrBi2Ta2O9–Bi3TiNbO9 System

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