Fabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory-Reference-Cited by-同舟云学术

Fabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory

Published:2001-02 Issue:1-4 Volume:34 Page:113-120
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Shin Chang Ho¹,Cha Seon Yong¹,Lee Hee Chul¹,Lee Won-Jae²,Yu Byoung-Gon²,Kwak Dong-Hwa³

Affiliation:

1. a Department of Electrical Engineering , Korea Advanced Institute of Science and Technology , 373–1, Kusong-dong, Yusong-gu, Taejon, 305–701, Korea

2. b Micro-Electronics Technology Laboratory, ETRI , 161, Kajong-dong, Yusong-gu, Taejon, 305–600, Korea

3. c TD Team, Semiconductor R&D Center, Samsung Electronics Co. , San#24 Nongseo-ri, Kiheung-eup Yongin-city, Kyunggi-do, 449–771, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580108012880

Reference7 articles.

1. Memory effects of SrBi2Ta2O9 capacitor on silicon with a silicon nitride buffer

2. Preparation ofSrBi2Ta2O9Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor UsingAl/SrBi2Ta2O9/CeO2/Si(100)Structures

3. The role of buffer layer in strontium bismuth tantalate based ferroelectric gate mos structures for non-volatile non destructive read out memory applications

4. Substrate dependence on the optical properties of Al2O3 films grown by atomic layer deposition

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