Ferroelectric field effect of a thin NaNO2-layer on a Si-substrate
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150198608008195
Reference6 articles.
1. A new solid state memory resistor
2. Ferroelectric field‐effect memory device using Bi4Ti3O12film
3. Memory retention and switching behavior of metal-ferroelectric-semiconductor transistors
4. PbTiO3ferroelectric thin film gate fet for infrared detection
5. Ferroelectric properties of thin NaNO2–layers
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1. Pyroelectric detector array with PVDF on silicon integrated circuit;Sensors and Actuators A: Physical;1990-10
2. Integrated pyroelectric detector arrays with the sensor material PVDF;Ferroelectrics;1990-09
3. Pyroelectric infrared sensor arrays based on the polymer PVDF;Sensors and Actuators A: Physical;1990-06
4. A 16-element linear pyroelectric array with NaNO2 thin films;Infrared Physics;1989-01
5. A simple technique to interface pyroelectric materials with silicon substrates for infrared detection;Ferroelectrics Letters Section;1989-01
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