Effect of Silicon Dioxide Hardness on Scratches in Interlevel Dielectric Chemical–Mechanical Polishing-Reference-Cited by-同舟云学术

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Effect of Silicon Dioxide Hardness on Scratches in Interlevel Dielectric Chemical–Mechanical Polishing

Published:2014-01-17 Issue:2 Volume:57 Page:190-197
ISSN:1040-2004
Container-title:Tribology Transactions
language:en
Short-container-title:Tribology Transactions

Author:

Kwon Tae-Young,Cho Byoung-Jun,Venktesh R. Prasanna,Ramachandran Manivannan,Kim Hyuk-Min,Hong Chang-Ki,Park Jin-Goo

Publisher

Informa UK Limited

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanical Engineering,Mechanics of Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/10402004.2013.861048

Reference30 articles.

1. Chemical-Mechanical Planarization of Semiconductor Materials

2. Microelectronic Applications of Chemical Mechanical Planarization

3. Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturing

4. Chemical processes in glass polishing

5. Chemical mechanical planarization for microelectronics applications

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1. A special electrostatic self-assembly structure of colloidal silica: Improving Chemical Mechanical Polishing performance;Materials Science in Semiconductor Processing;2024-04

2. Tribological behavior of 6H–SiC wafers in different chemical mechanical polishing slurries;Wear;2021-05

3. Unraveling Slurry Chemistry/Nanoparticle/Polymeric Membrane Adsorption Relevant to Cu Chemical Mechanical Planarization (CMP) Filtration Applications;ECS Journal of Solid State Science and Technology;2019

4. Effects of Microscale Particles as Antiwear Additives in Water-Based Slurries with Abrasives;Tribology Transactions;2016-03-03

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