Electron and neutron damage inn− andp−Channel junction field effect transistors-Reference-Cited by-同舟云学术

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Electron and neutron damage inn− andp−Channel junction field effect transistors

Published:1974-01 Issue:2 Volume:21 Page:99-104
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Miller D. J.,Ryan R. D.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420157408230817

Reference18 articles.

1. Capacitance Recovery in Neutron-Irradiated Silicon Diodes by Majority and Minority Carrier Trapping

2. Neutron Radiation Effects in Junction Field-Effect Transistors

3. Neutron Produced Trapping Centers in Junction Field Effect Transistors

4. Radiation Produced Trapping Effects in Devices-Invited Paper

5. The Interactions of Point Defects with Impurities in Silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modelling radiation effects using the ab-initio based tungsten and vanadium potentials;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-09

2. Radiation Damage;Semiconducting Devices;1976

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