Plan-view and cross-sectional TEM observations of interfacial reactions and fractal formation in a-Ge/Au films-Reference-Cited by-同舟云学术

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Plan-view and cross-sectional TEM observations of interfacial reactions and fractal formation in a-Ge/Au films

Published:1998-07 Issue:1 Volume:78 Page:157-170
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Bian Bo,Tanaka Tomoya,Ohkubo Tadakatsu,Hirotsu Yoshihiko

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/014186198253732

Reference23 articles.

1. Transmission electron microscopy of annealed a-Si1−xCx:H/Al films with different Al grain sizes

2. Fractal formation in a‐Si:H/Ag/a‐Si:H films after annealing

3. The influence of contact materials on the conduction crystallization temperature and electrical properties of amorphous germanium, silicon and boron films

4. The preparation of cross-section specimens for transmission electron microscopy

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Au-induced crystallization of amorphous Ge thin films: An indication of the existence of a recrystallization process during growth at deep subeutectic temperature;Journal of Alloys and Compounds;2024-12

2. Au-Induced Crystallization of Amorphous Ge Thin Films: An Indication of the Existence of a Recrystallization Process During Growth at Deep Subeutectic Temperature;2024

3. Fabrication of an atomically smooth Ge(111) surface by Au-induced crystallization at 170 °C;Applied Physics Letters;2023-04-24

4. Crystallization of Ge thin films by Au-induced layer exchange: effect of Au layer thickness on Ge crystal orientation;Japanese Journal of Applied Physics;2022-01-28

5. Effect of gold layer thickness on the low-temperature crystallization process of germanium thin films by gold-induced crystallization;Japanese Journal of Applied Physics;2020-07-31

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