Diamond hexagonal silicon phase and {113} defects Energy calculations and new defect models-Reference-Cited by-同舟云学术

Diamond hexagonal silicon phase and {113} defects Energy calculations and new defect models

Published:1993-03 Issue:3 Volume:67 Page:605-625
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Parisini A.¹,Bourret A.²

Affiliation:

1. a Istituto di Chimica e Tecnologia dei Materiali e dei Componenti per l'Elettronica (LAMEL) , Consiglio Nazionale delle Ricerche, via de' Castagnoli 1, 40126, Bologna , Italy

2. b Département de Recherche Fondamentale sur la Matière Condensée (DRFMC) , Service de Physique des Materiaux et Microstructures (SP2M) , 85 X Centre d'Etudes Nucleaires de Grenoble, 38041, Grenoble , France

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418619308207180

Reference34 articles.

1. Electron Beam Induced Changes of the Real Structure of Semiconductors

2. Radiation-induced rod-like defects in silicon and germanium

3. Rod-like defects in silicon: Coesite or hexagonal silicon?

4. Bourret , A. 1987.Microscopy of Semiconducting Materials, Institute of Physics Conference Series, No. 87 39Bristol: Institute of Physics.

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