Temperature Dependence of Electrical Conduction in Pb(Zr,Ti)O3Thin Films
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150190500311003
Reference12 articles.
1. Ferroelectric materials for 64 Mb and 256 Mb DRAMs
2. Ferroelectric Memories
3. Electrical characteristics of ferroelectric PZT thin films for DRAM applications
4. A model for electrical conduction in metal‐ferroelectric‐metal thin‐film capacitors
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2. Conductivity and barrier effects in thin-film PZT-based heterostructures, depending on the conditions of synthesis;Bulletin of the Russian Academy of Sciences: Physics;2013-08
3. Electrical Conduction Mechanisms in PZT Thin Films Deposited by RF Magnetron Sputtering Method;Ferroelectrics;2013-01
4. Conductivity and current-voltage characteristics of PZT thin-film heterostructures;Physics of the Solid State;2011-10
5. Processing, Structure, Properties, and Applications of PZT Thin Films;Critical Reviews in Solid State and Materials Sciences;2007-12-04
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