The Influence of Annealing Process on Physical and Electrical Characteristics of (Ba0.8Sr0.2)(Ti0.9Zr0.1)O3Thin Films
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150190902865085
Reference10 articles.
1. High dielectric constant (Ba[sub 0.65]Sr[sub 0.35])(Ti[sub 0.41]Zr[sub 0.59])O[sub 3] capacitors for Gbit-scale dynamic random access memory devices
2. Improved dielectric properties and tunability of multilayered thin films of (Ba0.80Sr0.20)(Ti1−xZrx)O3 with compositionally graded layer
3. Jaffe, B., Cook, W. R. and Jaffe, H. 1971.“Piezoelectric Ceramic”, 101London: Academic Press.
4. Dielectric and Electrical Characteristics of the Barium Strontium Titanate Zirconium Thin Film by RF Sputtering
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2. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices;Journal of Electronic Materials;2016-12-01
3. Improving the Properties of Sol–Gel Deposition SrBi4Ti4O15 Thin Films by Post-annealing Process;Intelligent Technologies and Engineering Systems;2013
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