A high output power V-band GaAs HEMT push–pull power amplifier using meandering baluns technology-Reference-Cited by-同舟云学术

A high output power V-band GaAs HEMT push–pull power amplifier using meandering baluns technology

Published:2013-08-09 Issue:15 Volume:27 Page:1869-1881
ISSN:0920-5071
Container-title:Journal of Electromagnetic Waves and Applications
language:en
Short-container-title:Journal of Electromagnetic Waves and Applications

Author:

Chiu Hsien-Chin¹,Ke Po-Yu¹,Huang Fan-Hsiu¹

Affiliation:

1. a Department of Electronics Engineering , Chang Gung University , Tao-Yuan , 259 , Taiwan

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Physics and Astronomy,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/09205071.2013.826149

Reference15 articles.

1. A Fully Integrated V-Band PLL MMIC Using 0.15-$muhbox m$GaAs pHEMT Technology

2. Ohata K, Maruhashi K, Ito M, Kishimoto S, Ikuina S, Hashiguchi T, Takahashi N, Iwanaga S. 1.25 Gb/s wireless gigabit ethernet link at 60 GHz band. In: IEEE Int. Microwave Symp. Dig.; 2003 Jun. p. 373–376.

3. Tanomura M, Hamada Y, Kishimoto S, Ito M, Orihashi N, Maruhashi K, Shimawaki H. TX and RX front-ends for 60 GHz band in 90 nm standard bulk CMOS. In: IEEE ISSCC Dig. Tech. Papers; 2008 Feb 3–7; San Francisco, CA. p. 558–559.

4. A 60 GHz SiGe-HBT Power Amplifier With 20% PAE at 15 dBm Output Power

5. Broad bandwidth transformer coupled differential amplifiers for high dynamic range

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