Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters
Author:
Affiliation:
1. Department of Electrical Engineering, National Sun Yat-Sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan
2. Institute of Communications Engineering, National Sun Yat-Sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan
Funder
National Science Council Taiwan
Ministry of Science and Technology of Taiwan
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,General Physics and Astronomy,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/09205071.2015.1062805
Reference21 articles.
1. A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche Area in SiGe
2. A 2.4GHz high output power and high efficiency power amplifier operating at inductive breakdown in CMOS technology
3. Modeling Inductive Behavior of MOSFET Scattering Parameter $S _{22}$ in the Breakdown Regime
4. Hot Small-Signal<tex>$S$</tex>-Parameter Measurements of Power Transistors Operating Under Large-Signal Conditions in a Load–Pull Environment for the Study of Nonlinear Parametric Interactions
5. Linearization of large-signal scattering functions
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