Mott criterion for metal–insulator transition in doped semiconductors in intense magnetic fields
Author:
Publisher
Informa UK Limited
Subject
General Materials Science,Instrumentation
Link
http://www.tandfonline.com/doi/pdf/10.1080/01411594.2011.604836
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1. Shallow Impurity States in Silicon and Germanium
2. Large binding due to dispersive screening and bloch function interference in many-valley semiconductors
3. Why Muons and Protons are Deep Donors in Si and Ge
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1. Magnetic field dependent polarizability and electric field dependent diamagnetic susceptibility of a donor in Si;Applied Physics A;2016-08-08
2. Electron transport near the Mott transition inn-GaAs andn-GaN;Phase Transitions;2015-10-13
3. Electron–electron interaction and metal–insulator transition in doped semiconductors under intense magnetic fields;Phase Transitions;2015-07-02
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