Study of aluminium-modified Ge2Sb2Te5thin films for the applicability as phase-change storage device material
Author:
Affiliation:
1. Semiconductors Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar, India
2. Department of Physics, DAV University, Jalandhar, India
Funder
University Grants Commission
Publisher
Informa UK Limited
Subject
General Materials Science,Instrumentation
Link
https://www.tandfonline.com/doi/pdf/10.1080/01411594.2017.1309402
Reference37 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Origin, secret, and application of the ideal phase-change material GeSbTe
3. Fast phase transitions induced by picosecond electrical pulses on phase change memory cells
4. Nanosecond switching in GeTe phase change memory cells
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1. Research on the flexible phase change memory devices based on Ge2Sb2Te5/Mg35Sb65 superlattice-like thin films;Journal of Alloys and Compounds;2024-03
2. Phase transition behavior and electrical resistance stability of Ge2Sb2Te5/Sb superlattice-like films on a flexible substrate;Ceramics International;2023-08
3. Recent advances in doped Ge2Sb2Te5 thin film based phase change memories;Materials Advances;2023
4. Ga doping induced structural and optical modification in $$\hbox {Ge}_{2}\hbox {Sb}_{2}\hbox {Te}_{5}$$ thin films;Journal of Materials Science: Materials in Electronics;2022-05-20
5. Effect of Cu doping on microstructure and thermal stability of Ge2Sb2Te5 thin film;Applied Physics A;2019-07-25
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