Investigation of radiation damage in silicon by a backscattering method
Author:
Affiliation:
1. a Sektion Physik der Friedrich-Schiller-Universitat Jena , DDR 69 Jena, Max-Wien-Platz 1
Publisher
Informa UK Limited
Subject
General Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00337577508242050
Reference13 articles.
1. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
2. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
3. Disorder in implanted semiconductors: Energy dependence and penetration depth
4. Defect studies in crystals by means of channeling
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1. Effect of thin amorphous layers on channeling in diamond;Physical Review B;1989-12-01
2. Bibliography on Applications of Backscattering Spectrometry;Backscattering Spectrometry;1978
3. Depth Distribution of Damage Obtained by Rutherford Backscattering Combined with Channeling;Ion Beam Surface Layer Analysis;1976
4. On “measurements” of radiation damage by backscattering experiments;Radiation Effects;1976-01
5. Quantitative Analyse von Schichtsystemen mit der Methode der Rutherford-Weitwinkelstreuung;Journal of Radioanalytical Chemistry;1975-03
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