Disorder in implanted semiconductors: Energy dependence and penetration depth-Reference-Cited by-同舟云学术

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Disorder in implanted semiconductors: Energy dependence and penetration depth

Published:1971-03-16 Issue:3 Volume:4 Page:797-804
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Mea G. Della,Drigo A. V.,Mazzoldi P.,Nardelli G.,Zannoni R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING

2. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

3. The Energy Dependence of Lattice Disorder in Ion-Implanted Silicon

4. Hg ION implantation in silicon: Lattice disorder created and hg atom lattice location

5. Displacement spike crystallization of amorphous germanium during irradiation

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1. Unravelling the secrets of Cs controlled secondary ion formation: Evidence of the dominance of site specific surface chemistry, alloying and ionic bonding;Surface Science Reports;2013-03

2. Quantitative characterization of xenon bubbles in silicon: Correlation of bubble size with the damage generated during implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-02

3. Rapid-relocation model for describing high-fluence retention of rare gases implanted in solids;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-09

4. Second-harmonic and sum-frequency generation in reflection: probing of GaAs surface structure and laser-induced phase transitions;Journal of the Optical Society of America B;1985-02-01

5. High density cascade effects;Radiation Effects;1981-01

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