Implantation of ytterbium ions into group II-VI compounds
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577308232290
Reference10 articles.
1. PHOTOLUMINESCENCE OF OXYGEN IN ZnTe INTRODUCED BY ION IMPLANTATION
2. The doping of semiconductors by ion bombardment
3. ion implantation of bismuth into GaP. I. photoluminescence
4. Ion implantation doping of zinc sulphide thin films
5. Olley, J. A., Williams, P. M. and Yoffe, A. D. Proc. European Conf. on ion Implantation. pp.148–152. England: Peter Pcregrinus Ltd.
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1. Incorporation and Luminescence of Yb3+ in CdSe Nanocrystals;Journal of the American Chemical Society;2013-09-05
2. Ion implanation in group II–VI compounds;Progress in Crystal Growth and Characterization;1983-01
3. The effect of non-stoichiometry on the implantation of ytterbium in cadmium telluride;Radiation Effects;1977-01
4. Annealing studies of cadmium telluride and zinc telluride implanted with ytterbium;Journal of Luminescence;1976-05
5. Activation of thin film Zn2SiO4 phosphors using ion implantation techniques;Journal of Vacuum Science and Technology;1976-01
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