Electrical measurements on electron irradiated n-and p-type GaAs
Author:
Affiliation:
1. a The Plessey Company, Cheney Manor , Swindon , Wilts
2. b Royal Military College of Science , Shrivenham, Swindon , Wilts
3. c J. J. Thomson Physical Laboratory, University of Reading , Reading , Berks
Publisher
Informa UK Limited
Subject
General Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00337577208234692
Reference15 articles.
1. The displacement energy in GaAs
2. Grimshaw , J. A. Proc. 7th Int. Conf. on the Physics of Semiconductors: Symposium on Radiation Damage in Semiconductors. pp.377Paris: Dunod. Vol. 3
3. Electrical Studies of Low‐Temperature Neutron‐ and Electron‐Irradiated Epitaxial n‐Type GaAs
4. Recovery of low temperature electron irradiation-induced damage inn-type gaas
5. Annealing behavior of bulkn-GaAs irradiated by electrons at 77°K
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