III-V compound review-Reference-Cited by-同舟云学术

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III-V compound review

Published:1971-06 Issue:3-4 Volume:9 Page:235-242
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Eisen F. H.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577108231053

Reference31 articles.

1. Aukerman, L. W. 1968.Semiconductor and Semimetals, Edited by: Willardson, R. K. and Beer, A. C. Vol. 4, 343New York: Academic Press.

2. Eisen, F. H. 1965.Radiation Damage in Semiconductors, 163Paris: Dunod Cie.

3. Orientation Dependence of Electron Radiation Damage in InSb

4. Energy and Orientation Dependence of Electron-Irradiation-Induced Damage in Undoped GaSb

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microscopic observation of vacancy and self-interstitial and the formation of Frenkel pairs in InSb by Mössbauer spectroscopy;Physica B: Condensed Matter;2009-12

2. Electrical measurement of implantation damage profiles in InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03

3. Electron microscopic investigation of the nature of the dislocation loops created by electron irradiation (2 MeV) between room temperature and 200°C in InSb single crystals;Scripta Metallurgica;1983-10

4. Impurity and Defect Levels (Experimental) in Gallium Arsenide;Advances in Electronics and Electron Physics Volume 61;1983

5. Ion doping of gallium arsenide;Soviet Physics Journal;1980-01

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