Critical channeling angles of low energy ions in silicon
Author:
Affiliation:
1. a Max-Pknck-Institut für Kernphysik , 69 Heidelberg 1, Postfach 103980 , Saupfercheckweg 1
Publisher
Informa UK Limited
Subject
General Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00337577608233496
Reference14 articles.
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3. Single-crystal sputtering including the channeling phenomenon
4. Critical Angles for Channeling of 1- to 25-keVH+,D+, andHe+Ions in Gold Crystals
5. Critical angles for channeling of low energy ions in tungsten
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