Formation of SiC and Si3N4in silicon by ion implantation
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577608233477
Reference8 articles.
1. Formation of SiO2Films by Oxygen-Ion Bombardment
2. Infrared Properties of Hexagonal Silicon Carbide
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