Recoil implantation from a thick film source-Reference-Cited by-同舟云学术

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Recoil implantation from a thick film source

Published:1978-01 Issue:1-2 Volume:38 Page:41-43
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Fischer G.,Carter G.,Webb R.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577808233207

Reference14 articles.

1. Production of solar cells by recoil implantation

2. Shannon, J. M. 1975–1976.Application of Ion Beams to Materials, Inst, of Phys. Conf. Series No. 28 Edited by: Carter, G., Colligon, J. S. and Grant, W. A. 37London

3. Migration of Mo atoms across Mo–Si interface induced by Ar+ion bombardment

4. Nishi, H., Sakuray, T. and Furuya, T. 1957.Ion Implantation in SemiconductorsEdited by: Namba, S. 347N.Y.: Plenum.

5. Recoil implantation from a thin source

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Creation of color centers in diamond by recoil implantation through dielectric films;Applied Physics Letters;2024-01-22

2. RADIATION DEFECT ENGINEERING;International Journal of High Speed Electronics and Systems;2005-03

3. Theory of the recoil implantation;Physica Status Solidi (a);1989-12-16

4. Computer Simulation of Ion-Beam Mixing of Cobalt on Silicon;Materials Modification by High-fluence Ion Beams;1989

5. ION BEAM MIXING;Ion Beam Assisted Film Growth;1989

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