CdS and CdSe thin-film transistors employing ‘mixed oxide’ as the gate insulator
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207218608920893
Reference12 articles.
1. Thin film transistors
2. Theory of the thin film transistor
3. Field effect spectroscopy of CdSe‐insulator interface states
4. A CdS-Pr6O11thin film transistor
5. Cadmium selenide thin‐film transistors
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1. Thermally deposited Ag-doped CdS thin film transistors with high-k rare-earth oxide Nd2O3 as gate dielectric;Semiconductors;2013-03
2. Effect of Ag doping on the electrical properties of thermally deposited CdS–La2O3TFTs;International Journal of Electronics;2012-06
3. Rare Earth Compounds (Oxides, Sulfides, Silicides, Boron, …) as Thin Films and Thin Crystals Physico-Chemical Properties and Applications;Physica Status Solidi (a);1989-07-16
4. Suitability of Rare-Earth Oxides for Use in Thin Film Transistors;Physica Status Solidi (a);1987-12-16
5. Some studies of mixed oxide thin film transistors;International Journal of Electronics;1987-11
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