Further studies on thin film structures of metal-borosilicate glass-metal
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207217408900509
Reference19 articles.
1. Some electrical properties of thin film copper–borosilicate glass–copper sandwiches intended for use as electron emitters
2. A model for filament growth and switching in amorphous oxide films
3. GREEN , P. D. , BUSH , E. L. , and RAWLINGS , I. R. , 1969 , Proceedings of the Symposium on Deposited Thin Film Dielectric Materials ( Electrochemical Society ) .
4. Hot electron attenuation in silicon oxide
5. Low‐Frequency Negative Resistance in Thin Anodic Oxide Films
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1. Metal–insulator–metal and metal–insulator structures as electron sources;International Journal of Electronics;1990-07
2. Parametric dependences of the conduction in electroformed insulating films;Physica Status Solidi (a);1989-12-16
3. A.c. conduction mechanism and dielectric properties of co-evaporated SiO/B2O3 amorphous thin films;Journal of Materials Science;1989-12
4. Bistable switching in electroformed metal–insulator–metal devices;Physica Status Solidi (a);1988-07-16
5. On the relationship between the conduction characteristics and the statistical parameters of a normal distribution of filamentary resistances in an electroformed metal/insulator/metal device;Thin Solid Films;1986-08
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