On the relationship between the conduction characteristics and the statistical parameters of a normal distribution of filamentary resistances in an electroformed metal/insulator/metal device-Reference-Cited by-同舟云学术

On the relationship between the conduction characteristics and the statistical parameters of a normal distribution of filamentary resistances in an electroformed metal/insulator/metal device

Published:1986-08 Issue:2 Volume:141 Page:201-214
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ray A.K.,Hogarth C.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Invited paper A critical review of the observed electrical properties of MIM devices showing VCNR

2. Electrical phenomena in amorphous oxide films

3. The effects of filamentary conduction through uniform and flawed filaments in insulators and semiconductors

4. A mathematical analysis for the peak of the conduction characteristic of formed MIM devices

5. A theory for negative resistance and memory effects in thin insulating films and its application to Au-ZnS-Au devices

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monte Carlo simulation of current–voltage characteristics in metal–insulator–metal thin film structures;Thin Solid Films;2003-06

2. Derivation of the current-voltage characteristics in filamentary conductors as a function of the distribution of filament cross-sectional areas;Thin Solid Films;1994-08

3. Electroformed MIM structures: dependence of the current-voltage characteristics on the standard deviation of a normal distribution of filamentary radii;International Journal of Electronics;1992-08

4. The electroforming of thin films of copolymer of polypropylene and polyethylene formed by vacuum evaporation;International Journal of Electronics;1988-11