1. Simulation of SiC High Power Devices
2. 4 kV 4H-SiC epitaxial emitter bipolar junction transistors
3. Balachandran, S. Li, C., Losee, P.A., Bhat, I.B., and Chow, T.P. (2007), ‘6 kV 4H-SiC BJTs With Specific On-Resistance Below the Unipolar Limit using a Selectively Grown Base Contact Process’, inProceedings of the ISPSD, Jeju, Korea, 27–31 May, pp. 293–296
4. Charlotte, J. Capell, C., Burk, A., Zhang, Q., Callanan, R., Agarwal, A., Geil, B., and Scozzie, C. (2007), ‘1200 V 4H-SiC Bipolar Junction Transistors with a Record Beta of 70’,Journal of Electronic Materials, 37(5), 662–665