An improved and simple parameter extraction method and scaling model for RF MOSFETs up to 40 GHz
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207217.2011.643492
Reference15 articles.
1. MOSFET Modeling for RF IC Design
2. On the RF Series Resistance Extraction of Nanoscale MOSFETs
3. A new method for determining the FET small-signal equivalent circuit
4. Direct parameter extraction method for deep submicrometer metal oxide semiconductor field effect transistor small signal equivalent circuit
5. Deep null steering by controlling excitation phases of part elements
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