Concurrent error detectable and self-repairable carry select adder-Reference-Cited by-同舟云学术

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Concurrent error detectable and self-repairable carry select adder

Published:2021-12-30 Issue: Volume: Page:1-19
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

Musala Sarada¹^ORCID,Neelam Aruna Kumari¹^ORCID,Sreenivasulu V Bharath²^ORCID,Vardhan K. Vijaya³

Affiliation:

1. Department of ECE, Vignan's Foundation for Science Technology and Research, Guntur, AP, India

2. Department of ECE, National Institute of Technology, Warangal, Telangana, India

3. Department of ECE, Vignan’s LARA Institute of Science and Technology, Guntur, AP, India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/00207217.2021.2001862

Reference30 articles.

1. Self-repairing adder using fault localization

2. Self-Checking Carry Select Adder with Fault Localization

3. Self-Repairing Hybrid Adder With Hot-Standby Topology Using Fault-Localization

4. Impact of ion implantation on stacked oxide cylindrical gate junctionless accumulation mode MOSFET: An electrical and circuit level analysis

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An efficient single-stage carry select adder using excess-1 FinFET circuit in 22 nm technology;Semiconductor Science and Technology;2024-08-22

2. Impact of ambient temperature on CombFET for sub-5-nm technology nodes: An RF performance perspective;Microsystem Technologies;2024-05-18

3. Artificial Neurons – Transistor Based Implementation;2023 International Conference on Next Generation Electronics (NEleX);2023-12-14

4. Nanosheet Field Effect Transistor Device and Circuit Aspects for Future Technology Nodes;ECS Journal of Solid State Science and Technology;2023-08-01

5. A new Excess-1 circuit based High-Speed Carry Select Adder in 18 nm FinFET Technology;2023-05-05

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