A study of the layer and junction properties of boron implantation in silicon
Author:
Affiliation:
1. a Electronics Laboratories , University of Kent , Canterbury, Kent, CT2 7NT, England.
2. b Physics Department , Kuwait University , Kuwait.
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00207217608920556
Reference13 articles.
1. A study of 2 MeV helium-irradiated phosphorus-diffused silicon
2. Electrical Behavior of Group III and V Implanted Dopants in Silicon
3. Correlation of electron microscope studies with the electrical properties of boron implanted silicon
4. EL-DHAHER , A. H. G. 1974 , Ph.D. Thesis , University of Kent .
5. GROVE , A. S. 1967 , Physics and Technology of Semiconductor Devices ( John Wiley ), Chap. 6. 6 .
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1. Distribution profiles of boron-implanted layers in silicon using a high resolution anodic oxidation cell;International Journal of Electronics;1976-06
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