Author:
Aminbeidokhti Amirhossein,Orouji Ali A.
Subject
Electrical and Electronic Engineering
Reference16 articles.
1. A novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications
2. SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD-PLATE SiC MESFETs
3. Cha , HY . Thomas, C.I., Koley, G., Kim, H., Eastman, L.F., and Spencer, M.G. (2002), ‘Channel Recessed 4H-SiC MESFETs withFtof 14.5 GHz andFmaxof 40 GHz’, inProceedings IEEE Lester Eastman Conference on High Performance Devices,August 6–8, Newark, USA, pp. 75–82
4. Simulation of 4H-SiC MESFET for High Power and High Frequency Response
5. Chen , Z . Deng, X., Luo, X., Zhang, B., and Li, Z. (2007), ‘Improved Characteristics of 4H-SiC MESFET with Multi-Recessed Drift Region’, inInternational EDST Workshop, Electron Devices and Semiconductor Technology,June 3–4, Tsinghua, China, pp. 82–85
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