The transition layer in polycrystalline PZT films-Reference-Cited by-同舟云学术

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The transition layer in polycrystalline PZT films

Published:1992-04 Issue:1 Volume:128 Page:7-12
ISSN:0015-0193
Container-title:Ferroelectrics
language:en
Short-container-title:Ferroelectrics

Author:

Alyoshin Vladimir,Sviridov Evgent,Bakirov Azamat,Margolin Aron,Zakharchenko Irina,Sem Irina,Dudkevich Vladimir

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/00150199208015058

Reference6 articles.

1. Preparation and basic properties of PbTiO3ferroelectric thin films and their device applications

2. Dudkevich, V. P. and Fesenko, E. G. 1979.Fizika segnetoelectricheskih plenok, 190Rostov-on-Don: izd. RGU.

3. The thickness dependency of the dielectric constant in certain thin‐film dielectrics

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relaxor-Like behaviour of thin ferroelectric films with imperfect crystal structure;Ferroelectrics;1999-12

2. Influence of conditions of r.f. sputtering on chemical constitution and structure of PZT-type thin films;Integrated Ferroelectrics;1999-07

3. Light Influence on Fatigue in PZT Films with Planar Electrodes;MRS Proceedings;1994

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