Influence of conditions of r.f. sputtering on chemical constitution and structure of PZT-type thin films-Reference-Cited by-同舟云学术

Influence of conditions of r.f. sputtering on chemical constitution and structure of PZT-type thin films

Published:1999-07 Issue:1-4 Volume:23 Page:229-257
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Surowiak Z.¹,Czekaj D.¹,Bakirov A. A.²,Dudkevich V. P.²

Affiliation:

1. a Department of Materials Science , Silesian University , 2, Śnieżna St., 41–200, Sosnowiec, Poland

2. b Faculty of Physics , Rostov State University , 5, Zorge St., 344104, Rostov-on-Don, Russia

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589908210152

Reference44 articles.

1. Performance of sputtered pb0.92bi0.07la0.01(fe0.405NB0.325Zr0.27)O3 ferroelectric memory films

2. Some electrical and optical properties of ferroelectric lead‐zirconate–lead‐titanate thin films

3. Surowiak , Z. 1977. “Problems of physics of ferroelectric thin films”. p. 394Katowice: Silesian University. (in Polish)

4. Pb(Zr·Ti)O3Films by RF Sputtering in PbO Vapour

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