Rapid variation in epilayer threading dislocation density near x = 0·4 in GexSi1−xon (100) Si
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500839008215054
Reference7 articles.
1. Dislocation nucleation near the critical thickness in GeSi/Si strained layers
2. Variation in misfit dislocation behavior as a function of strain in the GeSi/Si system
3. Nucleation of misfit dislocations in strained‐layer epitaxy in the GexSi1−x/Si system
4. Insituobservations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures
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2. Defect formation in Ge1−x Six/Ge(111) epitaxial heterostructures;Physics of the Solid State;2004-08
3. New Mechanism for Dislocation Blocking in Strained Layer Epitaxial Growth;Physical Review Letters;2000-01-31
4. Misfit Dislocations in Epitaxial Heterostructures: Mechanisms of Generation and Multiplication;physica status solidi (a);1999-01
5. Misfit Strain and Accommodation in SiGe Heterostructures;Semiconductors and Semimetals;1998
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