A multiple cross-slip mechanism for the generation of misfit dislocations in (001) semiconductor heterostructures-Reference-Cited by-同舟云学术

A multiple cross-slip mechanism for the generation of misfit dislocations in (001) semiconductor heterostructures

Published:1993-05 Issue:5 Volume:67 Page:323-330
ISSN:0950-0839
Container-title:Philosophical Magazine Letters
language:en
Short-container-title:Philosophical Magazine Letters

Author:

Cherns D.,Chou C. T.,Steeds J. W.,Ashenford D. A.,Lunn B.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

http://www.tandfonline.com/doi/pdf/10.1080/09500839308241269

Reference9 articles.

1. Observations of new misfit dislocation configurations and slip systems at ultrahigh stresses in the (Al)GaAs/InxGa1−xAs/GaAs(100) system

2. Cherns, D. Initial Stages of Epitaxy. Materials Research Society Symposium Proceedings. Vol. 94, pp.99Pittsburgh, Pennsylvania: Materials Research Society.

3. Mechanism of climb of dissociated dislocations

4. Cross-slip on {110} planes in aluminum single crystals compressed along 〈100〉 axis

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