Mechanism of climb of dissociated dislocations

Author:

Abstract

The ‘weak-beam’ electron microscopy technique has been used to study the climb of dissociated dislocations in a C u-13.43 % A1 alloy under conditions of high supersaturation of point defects introduced by electron irradiation at room and elevated temperatures. Prismatic loops (assumed to be of the interstitial type because of the dislocation ‘bias’) are found to be nucleated on the individual partials. The Burgers vectors of the nucleated loops are a function of the dislocation character, and are such as to minimize the elastic energy of the resultant configuration (partial plus loop), and to maximize the edge component of the loops. For orientations other than pure edge, climb involves the generation of Burgers vectors different from those of the original partials. The complex dislocation configurations formed by climb at elevated temperatures can be understood in terms of the nucleation of prismatic loops and their growth in directions controlled by the climb force on the parts of the prismatic loops not lying in the glide plane of the dislocations.

Publisher

The Royal Society

Subject

Pharmacology (medical)

Reference5 articles.

1. Proc;R. Soc. Lond. A,1955

2. C arter C. B . Cherns D . H irsch. P . B. & S aka H . 1978 `Proc. of th e 9 th I n t. Congress on E lectro n M icroscopy' T oro n to (M icroscopical Soc. o f C anada). Vol. I p. 324.

3. C arter C. B. & H irsch P . B. 1977

4. Observations of constrictions on dissociated dislocation lines in copper alloys

5. Cockayne D . J . H . 1973 J . M P h i l . M a g . 35 1509.

Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3