Evidence for competing growth phases in ion-beam-deposited epitaxial silicon films

Author:

Orrman-Rossiter Kevin G.,Mitchell D. R. G.,Donnelly S. E.,Rossouw C. J.,Glanvill S. R.,Miller P. R.,Al-Bayati Amir H.,van den Berg J. A.,Armour D. G.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Reference12 articles.

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4. Substrate temperature dependence of homoepitaxial growth of Si using mass selected ion beam deposition;Journal of Applied Physics;1994-10

5. Ion beam deposition and in-situ ion beam analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01

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