Convergent-beam electron diffraction study of Ge0·5Si0·5/Si strained-layer superlattices grown by molecular beam epitaxy
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/09500839108201963
Reference15 articles.
1. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
2. Electron diffraction studies of strain in epitaxial bicrystals and multilayers
3. Tetragonal and monoclinic forms of GexSi1−xepitaxial layers
4. Convergent-beam electron diffraction study of strain modulation in GaAs/InGaAs superlattices grown by metal-organic chemical vapour deposition
5. Elastic relaxation in transmission electron microscopy of strained‐layer superlattices
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3. Estimation of the strain state of GexSi1−x/Si strained-layer superlattices by double-crystal X-ray diffraction;Journal of Crystal Growth;1994-08
4. Kinematical study of GexSi1 – x/Si strained-layer superlattice by a double crystal X-ray diffraction method;Philosophical Magazine Letters;1993-01
5. Diffraction characterization of totally relaxed, partially relaxed, and unrelaxed semiconductor strained‐layer superlattices;Journal of Applied Physics;1992-12
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